characteristic

Suitable for automotive electronic applications

The following results meet AEC-Q100 standard:

Device temperature class 1: ambient operating temperature range from - 40 ° C to 125 ° C

Device manikin (HBM) classification level 3A

Device Charger Device Model (CDM) Classification Class C6

Common mode transient immunity (CMTI)

Minimum value of 50 kV/ μ s. Typical value is 100kV/ μ S (when VCM=1500V)

Separate output can provide 2.5A peak pull current and 5A peak sink current

Short propagation delay: 76ns (typical value),

110ns (maximum)

2A active Miller clamp

Output short-circuit clamping

Soft switching off during short circuit (STO)

When a desaturation fault is detected, a fault alarm is sent through FLT and reset through RST

Input and output undervoltage lockout (UVLO) with ready (RDY) pin indication

Active output pull-down feature, the default output low level in case of low power supply or input suspension

2.25V to 5.5V input power supply voltage

15V to 30V output driver supply voltage

Complementary metal oxide semiconductor (CMOS) compatible input

Suppress input pulse and transient noise shorter than 20ns

Withstand surge isolation voltage up to 10,000VPK "

Safety and management certification:

8000 VPK VIOTM and 1420 VPK VIORM enhanced isolation according to DIN V VDE V 0884-10 (VDE V 0884-10): 2006-12

5700 VRMS isolation per UL 1577 for 1 minute

CSA Component Acceptance Notification 5A, IEC 60950-1 and IEC 60601-1 Terminal Equipment Standards

TUV certification according to EN 61010-1 and EN 60950-1

GB4943.1-2011 CQC Certification

UL, VDE, CQC, TUV certification has been passed and CSA certification is planned

application

Isolated Insulated Gate Bipolar Transistor (IGBT) and Metal Oxide Semiconductor Field Effect Transistor (MOSFET) drivers:

Hybrid Electric Vehicle (HEV) and Electric Vehicle (EV) power modules

Industrial motor control drive

Industrial power supply

Solar inverter

induction heating

ISO5452-Q1 is a 5.7 kVRMS enhanced isolated gate driver for IGBT and MOSFET, with separate outputs (OUTH and OUTL), 2.5A pull current capability and 5A sink current capability. The input terminal is powered by a single power supply from 2.25V to 5.5V. The allowable power supply range at the output end is 15V to

30V。 Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76ns ensures accurate control of the output stage.

The built-in desaturation (DESAT) fault detection function can identify when IGBT is in overcurrent state. When DESAT is detected, the "mute" logic will immediately block the isolator output, and start the soft shutdown process to inhibit OUTH and pull OUTL to the low level for continuous

two μ s。 When the OUTL reaches 2V (relative to the maximum negative power potential VEE2), the grid driver output will be "hard" pulled to the VEE2 potential, and then IGBT will be turned off immediately.

When the desaturation fault occurs, the device will send a fault signal through the isolation barrier to pull the FLT output of the input end to the low level and block the input of the isolator. "Mute" logic is activated during soft shutdown. The output state of FLT will be latched, and can only be reset through the low level effective pulse on RST input after RDY becomes high.

If IGBT is turned off during normal operation powered by bipolar output power supply, the output voltage will be hard clamped to VEE2. If the output power supply is unipolar, active Miller clamping can be used. This clamping will inject Miller current into a low impedance path to prevent IGBT from dynamic conduction under high voltage transient conditions.

The readiness of the gate driver for operation is controlled by two undervoltage lockout circuits that monitor the power supply at the input and output. If the power supply at either end is insufficient, the RDY output will become low, otherwise the output will be high.

ISO5452-Q1 is packaged with 16 pin small outline integrated circuit (SOIC). The rated operating ambient temperature range of this device is - 40 ° C to 125 ° C.