describe

W9825G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized into 4M words x 4 banks x 16 bits. W9825G6KH provides a data bandwidth of up to 200M words per second. To fully comply with the personal computer industry standards, W9825G6KH is classified into the following speed levels: -5, -5I, -6, -6I, -6L, -75, and 75L- 5/-5I grade components comply with the 200MHz/CL3 specification (-5I industrial grade, guaranteed to support -40 ° C ≤ TA ≤ 85 ° C)- 6/-6I/-6L grade components meet the 166MHz/CL3 specification (-6I industrial grade, guaranteed to support -40 ° C ≤ TA ≤ 85 ° C)- 75/75L meets the 133MHz/CL3 specification- The 6L and 75L components support self refreshing of the current IDD6 max. 1.5 mA

Access to SDRAM is targeted towards bursts. When selecting banks and rows through activity commands, continuous memory locations on a page can be accessed with burst lengths of 1, 2, 4, 8, or full pages. The column address is automatically generated by the internal counter of SDRAM during burst operations. Random column reading may also be achieved by providing its address at each clock cycle. The nature of multiple banks allows for the interweaving of internal banks to conceal estimated time costs.

By having programmable mode registers, the system can change the burst length, delay period, interleaving, or sequential burst to maximize its performance. W9825G6KH is the ideal main memory for high-performance applications.

FEATURES

 3.3V ± 0.3V Power Supply
 Up to 200 MHz Clock Frequency
 4,194,304 Words  4 Banks  16 Bits Organization
 Self Refresh Mode: Standard and Low Power
 CAS Latency: 2 and 3
 Burst Length: 1, 2, 4, 8 and Full Page
 Burst Read, Single Writes Mode
 Byte Data Controlled by LDQM, UDQM
 Power Down Mode
 Auto-precharge and Controlled Precharge
 8K Refresh Cycles/64 mS
 Interface: LVTTL

 Packaged in TSOP II 54-pin, 400 mil - 0.80, using Lead free materials with RoHS compliant