NCE N-Channel Enhancement Mode Power MOSFET NCE0102B
Negotiable /Unit
Min.Order:3000 Units
Shenzhen haifuli Electronics Co., Ltd
Description
The NCE0102B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS = 100V,ID = 1.8A RDS(ON) <680mΩ @ VGS=10V (Typ:530mΩ) RDS(ON) <700mΩ @ VGS=4.5V (Typ:580mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply