Description 

The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features 

● VDS =100V,ID =17A RDS(ON) <70mΩ @ VGS=10V (Typ:56mΩ) RDS(ON) <85mΩ @ VGS=4.5V (Typ:65mΩ) 

● High density cell design for ultra low Rdson 

● Fully characterized avalanche voltage and current 

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation 

● Special process technology for high ESD capability

Application 

● Power switching application 

● Hard switched and high frequency circuits