NCE P-Channel Enhancement Mode Power MOSFET NCE60P04SN
Negotiable /Unit
Min.Order:3000 Units
Shenzhen haifuli Electronics Co., Ltd
Description
The NCE60P04SN uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications.
General Features
● VDS =-60V,ID =-4A RDS(ON)<120mΩ @ VGS=-10V RDS(ON) <170mΩ @ VGS=-4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Load switch ● PWM application