NCE P-Channel Enhancement Mode Power MOSFET NCE2301C
Negotiable /Unit
Min.Order:3000 Units
Shenzhen haifuli Electronics Co., Ltd
Description
The NCE2301C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
General Features
● VDS = -15V,ID = -2.6A RDS(ON) <120mΩ @ VGS=-2.5V RDS(ON) <80mΩ @ VGS=-4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Application
● Load switch ● PWM application