Description 

The NCE30NP07S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

General Features 

● N-Channel VDS = 30V,ID =6.5A RDS(ON) <24mΩ @ VGS=10V RDS(ON) <37mΩ @ VGS=4.5V 

 ● P-Channel VDS = -30V,ID = -7A RDS(ON) <32mΩ @ VGS=-10V RDS(ON) <70mΩ @ VGS=-4.5V

Application 

● High power and current handing capability 

 ● Lead free product is acquired 

 ● Surface mount package