NCE N-Channel Enhancement Mode Power MOSFET NCE3025Q
Negotiable /Unit
Min.Order:3000 Units
Shenzhen haifuli Electronics Co., Ltd
Description
The NCE3025Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
General Features
● VDS =30V,ID =25A RDS(ON) <10mΩ @ VGS=10V RDS(ON) <14mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● SMPS and general purpose applications
● Hard switched and high frequency circuits
● Uninterruptible power supply