Mfr. #:

SI7252DP-T1-GE3

Manufacturer: Vishay

Product Category: MOSFET

RoHS: Details

Technology: Si

Mounting Style: SMD/SMT

Package / Case: PowerPAK-SO-8

Transistor Polarity: N-Channel

Number of Channels: 2 Channel

Vds - Drain-Source Breakdown Voltage: 100 V

Id - Continuous Drain Current: 36.7 A

Rds On - Drain-Source Resistance: 14 mOhms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V

Qg - Gate Charge: 27 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 150 C

Pd - Power Dissipation: 46 W

Channel Mode: Enhancement

Tradename: TrenchFET

Series: SI7

Packaging: Reel

Packaging: Cut Tape

Packaging: KXXReel

Brand: Vishay Semiconductors

Configuration: Dual

Fall Time: 7 ns

Forward Transconductance - Min: 40 S

Product Type: MOSFET

Rise Time: 13 ns

factory pack quantity: 3000

Subcategory: MOSFETs

Transistor Type: 2 N-Channel

Typical Turn-Off Delay Time: 18 ns

Typical Turn-On Delay Time: 12 ns

Unit Weight: 0.017870 oz