ZXMP10A13FQTA Diodes Incorporated MOSFET 100V P-Ch Enh FET 20Vgs -0.5A ID 625mW
USD $0.1 - $0.66 /Piece
Min.Order:10 Pieces
Shenzhen Kexinxin Technology Co., Ltd.
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Mfr. #:
ZXMP10A13FQTA
Manufacturer: Diodes Incorporated
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 700 mA
Rds On - Drain-Source Resistance: 1 Ohms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 3.5 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 806 mW
Channel Mode: Enhancement
Qualification: AEC-Q101
Series: ZXMP10A
Packaging: Reel
Packaging: Cut Tape
Packaging: KXXReel
Brand: Diodes Incorporated
Configuration: Single
Fall Time: 3.3 ns
Forward Transconductance - Min: 1.2 S
Product Type: MOSFET
Rise Time: 2.1 ns
factory pack quantiy: 3000
Subcategory: MOSFETs
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 5.9 ns
Typical Turn-On Delay Time: 1.6 ns
Unit Weight: 0.000282 oz