Mfr. #:

IRFBG30PBF

Manufacturer: Vishay

Product Category: MOSFET

RoHS:  Details

Technology: Si

Mounting Style: Through Hole

Package / Case: TO-220AB-3

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 1 kV

Id - Continuous Drain Current: 3.1 A

Rds On - Drain-Source Resistance: 5 Ohms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage: 4 V

Qg - Gate Charge: 80 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 150 C

Pd - Power Dissipation: 125 W

Channel Mode: Enhancement

Series: IRFBG

Packaging: Tube

Brand: Vishay Semiconductors

Configuration: Single

Fall Time: 29 ns

Product Type: MOSFET

Rise Time: 25 ns

Factory Pack Quantity:  1000

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Typical Turn-Off Delay Time: 89 ns

Typical Turn-On Delay Time: 12 ns

Part # Aliases: IRFBG30PBF-BE3

Unit Weight: 0.068784 oz

price: 1.31~2.96