Mfr. #:

STF9NM60N

Manufacturer: STMicroelectronics

Product Category: MOSFET

RoHS: Details

Technology: Si

Mounting Style: Through Hole

Package / Case: TO-220-3

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 600 V

Id - Continuous Drain Current: 6.5 A

Rds On - Drain-Source Resistance: 745 mOhms

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Vgs th - Gate-Source Threshold Voltage: 2 V

Qg - Gate Charge: 17.4 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 150 C

Pd - Power Dissipation: 25 W

Channel Mode: Enhancement

Tradename: MDmesh

Series: STF9NM60N

Packaging: Tube

Brand: STMicroelectronics

Configuration: Single

Fall Time: 26.7 ns

Product Type: MOSFET

Rise Time: 23 ns

factory pack quantiy: 1000

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Typical Turn-Off Delay Time: 52.5 ns

Typical Turn-On Delay Time: 28 ns

Unit Weight: 0.068784 oz