FGA40N65SMD

Manufacturer: onsemi

Product Category: IGBT Transistors

RoHS: Details

Technology: Si

Package / Case: TO-3PN

Mounting Style: Through Hole

Configuration: Single

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.9 V

Maximum Gate Emitter Voltage: - 20 V, + 20 V

Continuous Collector Current at 25 C: 80 A

Pd - Power Dissipation: 349 W

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 175 C

Series: FGA40N65SMD

Packaging: Tube

Brand: onsemi / Fairchild

Gate-Emitter Leakage Current: 400 nA

Product Type: IGBT Transistors

factory pack quantiy: 30

Subcategory: IGBTs

Unit Weight: 0.225789 oz