SI7997DP-T1-GE3

Manufacturer: Vishay

Product Category: MOSFET

RoHS: Details

Technology: Si

Mounting Style: SMD/SMT

Package / Case: PowerPAK-SO-8

Transistor Polarity: P-Channel

Number of Channels: 2 Channel

Vds - Drain-Source Breakdown Voltage: 30 V

Id - Continuous Drain Current: 60 A

Rds On - Drain-Source Resistance: 5.5 mOhms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V

Qg - Gate Charge: 106 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 150 C

Pd - Power Dissipation: 46 W

Channel Mode: Enhancement

Tradename: TrenchFET

Series: SI7

Packaging: Reel

Packaging: Cut Tape

Packaging: kxxReel

Brand: Vishay Semiconductors

Configuration: Dual

Fall Time: 40 ns, 40 ns

Forward Transconductance - Min: 71 S

Height: 1.04 mm

Length: 6.15 mm

Product Type: MOSFET

Rise Time: 10 ns, 50 ns

factory pack quantiy: 3000

Subcategory: MOSFETs

Transistor Type: 2 P-Channel

Typical Turn-Off Delay Time: 80 ns, 115 ns

Typical Turn-On Delay Time: 15 ns, 60 ns

Width: 5.15 mm

Part # Aliases: SI7997DP-GE3

Unit Weight: 0.017870 oz