Mfr. #:

IRF640NPBF

Manufacturer: Infineon

Product Category: MOSFET

RoHS: Details

Technology: Si

Mounting Style: Through Hole

Package / Case: TO-220-3

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 200 V

Id - Continuous Drain Current: 18 A

Rds On - Drain-Source Resistance: 150 mOhms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage: 2 V

Qg - Gate Charge: 44.7 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 175 C

Pd - Power Dissipation: 150 W

Channel Mode: Enhancement

Packaging: Tube

Brand: Infineon Technologies

Configuration: Single

Fall Time: 5.5 ns

Forward Transconductance - Min: 6.8 S

Height: 15.65 mm

Length: 10 mm

Product Type: MOSFET

Rise Time: 19 ns

factory pack quantiy: 2000

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Typical Turn-Off Delay Time: 23 ns

Typical Turn-On Delay Time: 10 ns

Width: 4.4 mm

Unit Weight: 0.068784 oz