MJ21195G PNP Transistors -250V TO-3

MJ21195G PNP Transistors -250V TO-3

USD $0.01 - $1 /Piece

Min.Order:100 Pieces

Supply Ability:
100000 Piece / Pieces per Month
Port:
Shanghai shenzhen or follow customer demand
Payment Terms:
T/T L/C D/P D/A Credit Card

Quick Details View All >

Place of Origin:
Jiangsu, China
Brand Name:
HC
Model Number:
MJ21195G
Type:
Bipolar Junction Transistor
Package Type:
Throught Hole

Wuxi Thunder Microelectronics Co., Ltd.

Business Type: Manufacturer,Trading Company
Wuxi Jiangsu China
Main Products: Transistor ,Fast recovery diode ,Mosfet ,Schottky Diode ,Power Management IC

Product Details

Product Description


 Features:
-Power Amplifier Applications
-Complementary to MJ21196G
-High collector voltage: VCEO=-250V (min)
- High SOA:3A , 80V , 1Sec
- 250 WATTS


Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.


Absolute Maximum Ratings(Tc=25℃):


Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-400
V
Collector-emitter voltage
VCEO
-250
V
Emitter-base voltage
VEBO
-7
V
Collector current
IC
-17
A
Base current
IB
-5
A
Collector power dissipation;Tc=25℃
PC
250
W
Junction temperature
Tj
150
Storage temperature range
TSTG
-55~150

Electrical Characteristics Tc=(25℃ ):


Characteristics
Symbol
 Test Condition
Min
Typ
Max
Unit
Collector cut-off current
ICBO
VCB=230V; IE=0
500
uA
Emitter cut-off current
IEBO
VEB=7V; Ic=0
500
uA
Dc current gain
hFE
IC=5A; VCE=4V;
70
140
Collector-emitter saturation voltage
VCE(sat)
IC=4A; IB=0.4A
0.5
V
Transition frequency
fT
VCE=10V; ICE=500mA ;f=1MHZ
58
MHZ
Symbol
Parameter
Typ
Units
RθJC
Junction-to-Case
0.83
℃/W


Related Products
* Below are part of general products provided by Thunder
* Package type could be adjusted according to customer needs
* New product (not in below list) could be developed according to customer needs
2SA1943
VCEO=-230V (min)
PNP TRANSISTORS
Complementary to 2SC5200
2SA5200
VCEO=230V (min)  
NPN TRANSISTORS
Complementary to 2SA1943
MJ21195G  
VCEO=-250V (min)
PNP TRANSISTORS
Complementary to MJ21196G
MJ21196G
VCEO=250V (min)
NPN TRANSISTORS
Complementary to MJ21195G
 TIP42C 
VCEO=-100V (min)
PNP TRANSISTORS
Complementary to TIP41C
 TIP41C 
VCEO=100V (min)
NPN TRANSISTORS
Complementary to TIP42C
2SA1837  
VCEO=-230V (min)
PNP TRANSISTORS
Complementary to 2SC4793
2SC4793
VCEO=230V (min)
NPN TRANSISTORS
Complementary to 2SA1837
2SA1941
VCEO=-200V (min)
PNP TRANSISTORS
Complementary to 2SC5198
2SC5198
VCEO=200V (min)
NPN TRANSISTORS
Complementary to 2SA1941
Our Company

Thunder Microeletronics was establised in 1995, specialized in power semiconductor parts production for over 20 years. Factory Area is over 7000m², incluse 1000m²  purification workshop (10T grade)  . Our main products are Schottky Diodes, Fast and Ultra Fast Recovery Diode, Mosfet (Field-Effort diode), Transistors, Rectfider Bridges and Power Management IC. We have own product deveopment and applicatioon team, fully support your requirements. 

Thunder Values :

Future and Result Focus 

*Reliability, Credibility, Legality 

*Initiative and Sustainability
*Determination and Responsibility
*Trust, Openness and Fairness 
Certifications
Packing & Delivery

Delivery

* For general Diodes in stock,shippment in 3 days after payment received.
* We expect customer to place order 15 days in advance, in case the ordering quantity is large or product is not our regular stock.


FAQ

Contact Supplier

Ms. Lana Shen Chat Now
Telephone
0086-510-85169977-8037
Mobile
0086-18051572673
Fax
0086-510-85165556
Address
G2 200 Linghu Road, New District, Wuxi Wuxi,Jiangsu

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