600V N-Channel mosfet transistor 2N60
USD $0.18 - $0.22 /Piece
Min.Order:1000 Pieces
Yangzhou Positioning Tech. Co., Ltd.
600V N-CHANNEL MOSFET
2N60
DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID =250μA | 600 |
— |
— | V |
Zero Gate Voltage Drain Current | IDSS |
VDS =600V, VGS =0V |
— |
— |
10 |
uA |
Gate-Body Leakage Current, Forward | IGSSF |
VGS =30V, VDS =0V |
— |
— |
100 |
uA |
Gate-Body Leakage Current, Reverse | IGSSR | VGS = -30V, VDS =0V |
— |
— | -100 | uA |
Gate Threshold Voltage | VGS(th) | VDS = VGS , ID =250μA | 3.0 |
— | 5.0 | V |
Static Drain-Source On-Resistance | RDS(on) |
VGS = 10 V, ID = 1.2 A |
— |
3.7 |
4.7 | W |
Drain-Source Diode Forward Voltage | VSD |
VGS = 0 V, IS = 2.4 A |
— |
— |
1.4 |
V |
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