GaN-on-SiC Epi Wafers for RF HEMT manufacturers 

Homray Material Technology provide high quanlity GaN-on-SiC Epi wafers for RF HEMT applications. Both 4 inch and 6 inch are available in HMT. AlGaN/GaN-on-SiC Structures and parameters can be customized in HMT company. 

The development of power supply inevitably needs small volume and high efficiency products, and it is inevitable to improve the working frequency. GaN and SiC are dominant in power density.Gallium nitride material first came into people's sight from LED and RF, and now develops into the application field of power devices. Gallium nitride GaN will provide high performance, low cost solutions.Because gallium nitride is based on silicon, the cost of using 8, 12-inch wafers will be greatly reduced in the future.