AlGaN/GaN On Silicon HEMT Wafer Manufacturer With High 2DEG Mobility

HMT company focus on GaN on Si Epitaxy wafer and GaN on SiC Epitaxy wafer for RF HEMT and power HEMT applications. we offer high quality and favourable price for GaN Epi wafers at the market. GaN based High Electron Mobility Transistor (HEMT) devices have high electron mobility and a wide band gap energy that makes them ideally suited for fast switching and high voltage operation under high temperature conditions. Furthermore, GaN has ten times the breakdown voltage of silicon, so it is naturally suited to high voltage operation required in power applications.