4 inch 4H-N As-cut SiC wafer manufacturer Unpolished SiC Substrate

4 inch 4H-N As-cut SiC wafer manufacturer Unpolished SiC Substrate

Negotiable /Piece

Min.Order:25 Pieces

Supply Ability:
10000000 Piece / Pieces per Month
Port:
SHANGHAI
Payment Terms:
T/T
Delivery Detail:
30 days

Quick Details View All >

Brand Name:
HMT
Place of Origin:
China
Model Number:
4 inch

Homray Material Technology

Business license
Business Type: Manufacturer
Suzhou Jiangsu China
Main Products: GaN Substrate Manufacturers ,GaN Wafer Suppliers ,GaN-On-Sapphire Wafer Manufacturers ,SiC Substrate Manufacturers ,SiC Wafer Suppliers ,GaN-On-Si Epi Wafer Suppliers ,GaN-On-SiC Epi Wafer Suppliers ,GaN-On-Silicon Epi Wafer Suppliers

Product Details

4 inch 4H-N As-cut SiC wafer manufacturer Unpolished SiC Substrate

Do you want to test your grinding and polishing equipments? Purchase As-Cut SiC Substrate Wafer from HMT SiC Wafer Manufacturer and Supplier in China. We manufacture unpolished 4 inch and 6 inch As-cut SiC wafer with lowest MPD with favourable price on the market. Contact us now and get quotaiton immediately!

SiC wide energy Gap (Band Gap) than the existing Si (silicon) Gap width more than 3 times wider, can withstand more than 10 times the voltage, SiC low loss, high power characteristics suitable for high voltage and high current application field, including electric vehicles, electric vehicle charging infrastructure, solar energy and offshore wind power and other green power generation equipment.ompared with traditional Si, the third-generation semiconductor material SiC can reduce the power conversion loss by 50%, reduce the power conversion cost by 20%, and improve the endurance of electric vehicles by 4%.




Contact Supplier

Ms. Tina Chang Sales Assistant Chat Now
Telephone
86-512-67078567
Mobile
86-15366208370
Address
60 Suli Road Suzhou,Jiangsu

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