SiC Protection Tube
USD $10 - $100 /Piece
Min.Order:50 Pieces
SiC Protection Tube
Si3N4 bonded SiC is a new type of high-grade refractory materials. It includes radiant tube, brick, deformed parts and so on. These products, which have energy saving, environmental protection, high temperature resistance, corrosion resistance and other advantages, can be widely applied in the field of Urban construction
Material | Silicon Nitride Bonded Silicon Carbide (N-SiC) |
Working Temperature | <1600℃ |
Item | Result | Item | Result |
Density (G/Cm3) | 2.72-2.8 | SiC (%) | 73-75 |
Apparent Porosity(%) | 11-13 | Si3N4 (%) | 22-24 |
Normal Temperature Rupture (MPa) | 40-55 | SiO2(%) | 1-3 |
High Temperature Rupture (MPa) | 50-65 | Si (%) | <0.5 |
Heat Conductivity (W/M.K)(1100℃) | 16-18 | The Highest Working Temperature(℃) | 1600 |
Heat Expansion(×10-6) | 4.2 |
Applications
Metal casting, molten metal industry
Advantages
1. With high conductivity of 16-18w/m.k(1100℃). The sheath wall is only thin to 15-20mm.
2. It will not be melted or eroded by metal liquid, and it will not contaminate the liquid.
3. Its structure is simple, convenient in installation and maintenance.
4. Even in such high temperature, it works well when immersed in metal liquid, and can work for a long time.
5. It having simple installation and maintenance.
Si3N4 bonded SiC is a new type of high-grade refractory materials. It includes radiant tube, brick, deformed parts and so on. These products, which have energy saving, environmental protection, high temperature resistance, corrosion resistance and other advantages, can be widely applied in the field of Urban construction, Kiln Furniture, Steel and non-ferrous mental, chemical construction materials, etc.
Si3N4 bonded SiC products with high strength in normal temperature. Under 1200-1400℃, it can keeps almost same strength and hardness with it under normal temperature. As the environment is different, the maximum service temperature can reached up to 1650-1750℃.
These products are obtained by reaction sintering of a mix of SiC with Si fines and additives and nitridation in N2 atmosphere at~1450℃
The following reaction would take place:
3Si+2N2→Si3N4
3Si+SiO2+2N2→2Si2N2O
Si3N4+SiO2→2Si2N2O
Si3N4 Si2N2O act as binder for the SiC grains
Production Process
Workshop
Analysis Equipment
Honors
Development History Of SiC Products
Packing & Delivery
Contact
Tel: 0086-136-33852636
Email: caec.sara@gmail.com
http://www.sicah.cn
Sales Manager: Sara Wang
Henan Si&C Co., Ltd