Main Products: GaN Substrate Manufacturers ,GaN Wafer Suppliers ,GaN-On-Sapphire Wafer Manufacturers ,SiC Substrate Manufacturers ,SiC Wafer Suppliers ,GaN-On-Si Epi Wafer Suppliers ,GaN-On-SiC Epi Wafer Suppliers ,GaN-On-Silicon Epi Wafer Suppliers
2 inch 4H-N Silicon Carbide Substrate SiC Wafer factory
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Suzhou Jiangsu ChinaMain Products: GaN Substrate Manufacturers ,GaN Wafer Suppliers ,GaN-On-Sapphire Wafer Manufacturers ,SiC Substrate Manufacturers ,SiC Wafer Suppliers ,GaN-On-Si Epi Wafer Suppliers ,GaN-On-SiC Epi Wafer Suppliers ,GaN-On-Silicon Epi Wafer SuppliersProduct Details
Homray material’s conductive n-type 4H single crystal SiC substrates are available in 50mm 76mm100 mm 150mm diameter with a micropipe density down to less than 5 per cm2. The standard orientation is 4 degrees off-axis. The substrates are normally supplied with customer specified SiC epitaxial layers.
Radars, satellites and cellular base stations for modern communication systems handle high power at high frequencies. Future systems will have to be built around nitride HEMT epitaxy grown semi-insulating silicon carbide to achieve the targeted performance.
2 inch 4H-N Silicon Carbide Substrate SiC Wafer factory
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