Product Details

GN010020P38 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication chips electronic components ic parts supply

Place of Origin China
Type Signal Diode
Package Type Other, new and original package, vacumm package with carton boxes

Product Features

GN010020P38 series GaN Internally Matched Power Amplifier
Performance characteristics:
Covering the working frequency band:1.0GHz~2.0GHz
Good 50Ω impedance matching,easy to cascade
Metal ceramic tube sealed package
Screw-fixed flange package or welded pill package

Product introduction:
Electrical performance table:
1.Working conditions:50Ω test system,VDS=+50V,IDS=50mA.((Typical test conditions: TA = +25℃,pulse width:10us,4% duty cycle.)
 ParameterTest ConditionsMinimumTypicallymaximumUnit
 Saturation powerFreq.=1.0GHz~2.0GHz VGS=-2.8~-3.5V
VDS=+28V
IDsq=15mA
38.0--dBm
 Power Gain15.5--dB
Power Added
Efficiency
49.0--%
 Power Flatness
-1.0dB
 Pinch-off voltageVDS=6VIDS≤100mA-5--3.50 V
Gate-source reverse
  Current
VDS=0VVGS=-10V
-5uA
Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similar
power specifications,higher efficiency and wider bandwidth can be customized.
Working limit parameter:
Source-drain voltage Vds+100Vwasted power
(Tc=25℃)
6W
Gate-source voltage Vgs-10Vstorage temperature-55℃~+125℃
Operating temperature-55℃~+75℃--


AFTER-SALES GUARANTEE

1. Each product from YINGDA has been given a warranty period of 365 days. During this period, we could provide free technical maintenance if there are any problems about our products.

2. If you find quality problems about our products after receiving them, you could test them and apply for unconditional refund if it can be proved.

3. If the products are defective or they don't working, you can return to us within 1 YEAR, all transportation and customs charges of the goods are borne by us.


Yingda is a leading and trusted supplier of all electronic components such as IC , Connectors, Transistors, Diodes, Capacitors, MOSFET, Power Cords, Adapter & All type of Automotive, Medical, Agricultural, Consumer electronics grade components. We provide all electronic components that exist. Yingda has always been a customer-driven and quality-focused company and we have more than 10 years experience in this field. You can fully trust us since we have good reputation and always been 100% honest and genuine to our clients.

MADE-IN-CHINA alternative solution provider for brand power tubes (internal matching, external matching), amplifier chips, amplifier modules, etc.

Main products: amplifiers, attenuators, detectors, diodes, directional couplers, front-end modules, hybrid microcircuits, infrastructure subsystems, mixers, demodulators, phase shifters, synthesizers, etc.

 


1. Microwave RF Devices MADE-IN-CHINA CNC Phase Shifters

2. High-frequency tubes, In-situ replacement: MA-COM, Motorola, SemeLAB, Microsemi, APT, Infineon, Toshiba, Mitsubishi, Hitachi, NEC

3. Domestic tube shell, substrate, packaging materials

4. Domestic diodes and transistors, In-situ replacement: IR, ON, ST and other imported brands

 

If you have any question or any shortage parts recently, pls feel free to contact me. 

FREE SAMPLS CAN BE PROVIDED FOR FIRST COOPERATION

I'll give you favorable price with short lead time and 365 days warranty. 

We ensure to only provide 100% new & original parts for you, if not refundable. 




ProductFrequencyPowerPackage
Gallium Nitride Diode GaN HEMT1.8~3.8G6WDFN4540
Gallium Nitride Diode GaN HEMT1.8~3.8G15WDFN4540
Gallium Nitride Diode GaN HEMT0.5-4G30WJY04f050
Gallium Nitride Diode GaN HEMT0.5~6G30WDFN3040
Gallium Nitride Diode GaN HEMT2.6G16+32DFN7065
Gallium Nitride Diode GaN HEMT3.5G16+32DFN7065
Gallium Nitride Diode GaN HEMT2.6G32+64DFN70100
Gallium Nitride Diode GaN HEMT3.5G32+64DNF70100
Gallium Nitride Diode GaN HEMT5.8G50W360
Gallium Nitride Diode GaN HEMT5.8G100W360

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