GN0912P46 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication chips electronic components ic parts supply
USD $0.1 - $10 /Piece
Min.Order:10 Pieces
Yingda International Technology Co.,Ltd.
GaN HEMT GN0912P46 | ||||||||||
GN0912P46 series GaN Internally Matched Power Amplifier | ||||||||||
Performance characteristics: | ||||||||||
Covering the working frequency band:0.96 ~1.22GHz Good 50Ω impedance matching,easy to cascade Metal ceramic tube sealed package Screw-fixed flange package or welded pill package | ||||||||||
Product introduction: | ||||||||||
Electrical performance table: | ||||||||||
1.Working conditions:50Ω test system,VDS=+28V,IDS=30mA.((Typical test conditions: TA = +25℃,pulse width:200us,10% duty cycle.) | ||||||||||
Parameter | Test Conditions | Minimum | Typically | maximum | Unit | |||||
Saturation power | Freq.=0.96 ~1.22GHz VGS=-2.8~-4V VDS=+50V IDsq=5~100mA | 46.0 | - | - | dBm | |||||
Power Gain | 20 | - | - | dB | ||||||
Power Added Efficiency | 65.0 | - | - | % | ||||||
Power Flatness | - | 0.8 | dB | |||||||
Pinch-off voltage | VDS=6V | IDS≤100mA | -5 | - | -3.50 | V | ||||
Gate-source reverse Current | VDS=0V | VGS=-10V | - | 5 | uA | |||||
Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similar power specifications,higher efficiency and wider bandwidth can be customized. | ||||||||||
Working limit parameter: | ||||||||||
Source-drain voltage Vds | +100V | wasted power (Tc=25℃) | 29W | |||||||
Gate-source voltage Vgs | -10V | storage temperature | -55℃~+125℃ | |||||||
Operating temperature | -40℃~+85℃ | - | - |
AFTER-SALES GUARANTEE
1. Each product from YINGDA has been given a warranty period of 365 days. During this period, we could provide free technical maintenance if there are any problems about our products.
2. If you find quality problems about our products after receiving them, you could test them and apply for unconditional refund if it can be proved.
3. If the products are defective or they don't working, you can return to us within 1 YEAR, all transportation and customs charges of the goods are borne by us.
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MADE-IN-CHINA alternative solution provider for brand power tubes (internal matching, external matching), amplifier chips, amplifier modules, etc.
Main products: amplifiers, attenuators, detectors, diodes, directional couplers, front-end modules, hybrid microcircuits, infrastructure subsystems, mixers, demodulators, phase shifters, synthesizers, etc.
1. Microwave RF Devices MADE-IN-CHINA CNC Phase Shifters
2. High-frequency tubes, In-situ replacement: MA-COM, Motorola, lucy(at)yingdainter(dot)com; lucyzhang(at)yingdainter(dot)com;
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