GN2735P45 Gallium Nitride Diode GaN HEMT  RF Microwave Optical Communication chips  electronic components ic parts supply
GN2735P45 Gallium Nitride Diode GaN HEMT  RF Microwave Optical Communication chips  electronic components ic parts supply
GN2735P45 Gallium Nitride Diode GaN HEMT  RF Microwave Optical Communication chips  electronic components ic parts supply

GN2735P45 Gallium Nitride Diode GaN HEMT RF Microwave Optical Communication chips electronic components ic parts supply

USD $0.1 - $10 /Piece

Min.Order:10 Pieces

Supply Ability:
100000 Piece / Pieces per Month
Port:
shenzhen, hongkong
Payment Terms:
T/T Cash Escrow
Delivery Detail:
3 days

Quick Details View All >

Place of Origin:
China
Type:
Signal Diode
Package Type:
Other, new and original package, vacumm package with carton boxes

Yingda International Technology Co.,Ltd.

Business license
Business Type: Distributor/Wholesaler
Main Products: electronic components ,ic parts supply ,Gallium Nitride Diode GaN HEMT ,RF Microwave Optical Communication chips

Product Details

GN12735P45 series GaN Internally Matched Power Amplifier
Performance characteristics:
Covering the working frequency band:2.7~3.5GHz
Good 50Ω impedance matching,easy to cascade
Metal ceramic tube sealed package
Screw-fixed flange package or welded pill package

Product introduction:
Electrical performance table:
1.Working conditions:50Ω test system,VDS=+28V,IDS=30mA.((Typical test conditions: TA = +25℃.)
 ParameterTest ConditionsMinimumTypicallymaximumUnit
 Saturation powerFreq.=2.7~3.5GHz

VGS=-2.8~-3.5V
VDS=+28V
IDsq=30mA
44.5--dBm
 Power Gain23.5--dB
Power Added
Efficiency
43.0--%
 Power Flatness
-2.1dB
 Pinch-off voltageVDS=6VIDS≤100mA-5--3.50 V
Gate-source reverse
  Current
VDS=0VVGS=-10V
-5uA
Note:The final technical indicators and dimensions are subject to the technical agreement.Products with similar
power specifications,higher efficiency and wider bandwidth can be customized.
Working limit parameter:
Source-drain voltage Vds+84Vwasted power
(Tc=25℃)
38W
Gate-source voltage Vgs-10Vstorage temperature-55℃~+125℃
Operating temperature-40℃~+75℃--


AFTER-SALES GUARANTEE

1. Each product from YINGDA has been given a warranty period of 365 days. During this period, we could provide free technical maintenance if there are any problems about our products.

2. If you find quality problems about our products after receiving them, you could test them and apply for unconditional refund if it can be proved.

3. If the products are defective or they don't working, you can return to us within 1 YEAR, all transportation and customs charges of the goods are borne by us.


Yingda is a leading and trusted supplier of all electronic components such as IC , Connectors, Transistors, Diodes, Capacitors, MOSFET, Power Cords, Adapter & All type of Automotive, Medical, Agricultural, Consumer electronics grade components. We provide all electronic components that exist. Yingda has always been a customer-driven and quality-focused company and we have more than 10 years experience in this field. You can fully trust us since we have good reputation and always been 100% honest and genuine to our clients.


MADE-IN-CHINA alternative solution provider for brand power tubes (internal matching, external matching), amplifier chips, amplifier modules, etc.

Main products: amplifiers, attenuators, detectors, diodes, directional couplers, front-end modules, hybrid microcircuits, infrastructure subsystems, mixers, demodulators, phase shifters, synthesizers, etc.

 

1. Microwave RF Devices MADE-IN-CHINA CNC Phase Shifters

2. High-frequency tubes, In-situ replacement: MA-COM, Motorola, lucy(at)yingdainter(dot)com; lucyzhang(at)yingdainter(dot)com;


 

Other related products

Frequency

Power

Package

Gallium Nitride Diode GaN HEMT

1.8~3.8G

6W

DFN4540

Gallium Nitride Diode GaN HEMT

1.8~3.8G

15W

DFN4540

Gallium Nitride Diode GaN HEMT

0.5-4G

30W

JY04f050

Gallium Nitride Diode GaN HEMT

0.5~6G

30W

DFN3040

Gallium Nitride Diode GaN HEMT

2.6G

16+32

DFN7065

Gallium Nitride Diode GaN HEMT

3.5G

16+32

DFN7065

Gallium Nitride Diode GaN HEMT

2.6G

32+64

DFN70100

Gallium Nitride Diode GaN HEMT

3.5G

32+64

DNF70100

Gallium Nitride Diode GaN HEMT

5.8G

50W

360

Gallium Nitride Diode GaN HEMT

5.8G

100W

360


Contact Supplier

Ms. lucy zhang Chat Now

You May Like

New Products

Recommended Products

View More View Less

Find Similar Products By Category

Hi~