Silicon Carbide Kiln Shelves
USD $10 - $100 /Piece
Min.Order:50 Pieces
Silicon Carbide Kiln Shelves
Silicon nitride bonded silicon carbide(N-SiC) kiln Shekves are excellent in performance of high strength, thermal conductivity, resistance of thermal shock, deformation, oxidization, and corrosion. It works well at high temperature within 1600℃. It is widely used in fields of vitrified...
Silicon nitride bonded silicon carbide(N-SiC) kiln Shekves are excellent in performance of high strength, thermal conductivity, resistance of thermal shock, deformation, oxidization, and corrosion. It works well at high temperature within 1600℃.
It is widely used in fields of vitrified abrasives, high alumina products, medium alumina all, industrial furnace, electronic ceramics, high voltage porcelain, sanitary ware, houshold porcelain, nitride alloy, foamed ceramics, and so on.
Physical And Chemical | |
SiC | ≥72% |
Si3N4 | ≥22% |
Fe2O3 | ≤0.7% |
Si | ≤0.4% |
Bulk Density | ≥2.65g/Cm3 |
Apparent Porosity | <16% |
Compressive Strength R. T. | ≥170MPa |
Modulus Of Rupture | ≥45MPa(R. T.) |
≥50MPa(1400°C) | |
Thermal Conductivity | ≥15w/M.K(1100°C) |
Refractoriness | 1800°C |
Max Working Temperature | 1550°C |
Other Specs Can Be Supplied As Clients' Request. |
Si3N4 bonded SiC is a new type of high-grade refractory materials. It includes radiant tube, brick, deformed parts and so on. These products, which have energy saving, environmental protection, high temperature resistance, corrosion resistance and other advantages, can be widely applied in the field of Urban construction, Kiln Furniture, Steel and non-ferrous mental, chemical construction materials, etc.
Si3N4 bonded SiC products with high strength in normal temperature. Under 1200-1400℃, it can keeps almost same strength and hardness with it under normal temperature. As the environment is different, the maximum service temperature can reached up to 1650-1750℃.
These products are obtained by reaction sintering of a mix of SiC with Si fines and additives and nitridation in N2 atmosphere at~1450℃
The Following Reaction Would Take Place:
3Si+2N2→Si3N4
3Si+SiO2+2N2→2Si2N2O
Si3N4+SiO2→2Si2N2O
Si3N4 Si2N2O act as binder for the SiC grains
Production Process
Workshop
Analysis Equipment
Honors
Development History Of SiC Products
Packing& Delivery
Contact
Tel: 0086-136-33852636
Email: caec.sara@gmail.com
http://www.sicah.cn
Sales Manager: Sara Wang
Henan Si&C Co., Ltd