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Field Effect Transistor AO3400A N-Channel Enhancement Mode 30V

AO3400A N

- Channel Enhancement Mode Field Effect Transistor

General Description	Feature
The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is Pb-free (meets ROHS & Sony 259 specifications).	VDS (V) = 30V ID = 5.7A (VGS = 10V) RDS(ON) < 26.5mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 48mΩ (VGS = 2.5V)

Thermal Characteristics

Parameter		Symbol	Typ	Max	Unit
Maximum Junction-to-Ambient A	t ≤ 10s	RθJA	70	90	°C/W
Maximum Junction-to-Ambient A	Steady-State		100	125	°C/W
Maximum Junction-to-Lead C	Steady-State	RθJL	63	80	°C/W

A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.

C. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating.

F: The current rating is based on the t ≤ 10s thermal resistance rating. Rev0: Apr. 2007