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N Channel Powertrench Mosfet FDS6676AS Intregrated Circuit Computer Chip Board

30V N-Channel PowerTrench FDS6676AS Electronic Components Original Stock

General Description

The FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous

DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.

Applications

• DC/DC converter

• Low side notebook

Features

• 14.5 A, 30 V. RDS(ON) max= 6.0 mΩ @ VGS = 10 V RDS(ON) max= 7.25 mΩ @ VGS = 4.5 V

• Includes SyncFET Schottky body diode

• Low gate charge (45nC typical)

• High performance trench technology for extremely low RDS(ON) and fast switching

• High power and current handling capability

Absolute Maximum Ratings TA=25o C unless otherwise noted

Symbol	Parameter	Rating	Unit
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current – Continuous (Note 1a)                       – Pulsed	14.5	A
		50
PD	Power Dissipation for Single Operation (Note 1a)                                                    (Note 1b)                                                    (Note 1c)	2.5	W
		1.5
		1
TJ, TSTG	Operating and Storage Junction Temperature Range	–55 to +150	°C

Thermal Characteristics

RθJA	Thermal Resistance, Junction-to-Ambient (Note 1a)	50	W/°C
RθJC	Thermal Resistance, Junction-to-Case (Note 1)	25

Package Marking and Ordering Information

Device Marking	Device	Reel Size	Tape width	Quantity
FDS6676AS	FDS6676AS	13“	12MM	2500 units
FDS6676AS	FDS6676AS_NL	13”	12MM	2500 units