Specifications
MQW 650nm FP LDLow threshold current
High output power
Built-in InGaAsP monitor PD
Absolute maximum ratings
Parameter | Symbol | Value | Unit |
LD Forward current | IF(LD) | 100 | mA |
LD Reverse voltage | VR(LD) | 2 | V |
PD Forward current | IF(PD) | 2 | mA |
PD Reverse voltag | VR(PD) | 30 | V |
Operating temperature | TOP | -10 ~ +65 | °C |
Storage temperature | TST | -40 ~ +85 | °C |
Soldering temperature/time | - | 240/10 | °C/S |
Optical & electrical characteristics
Parameter | Symbol | Test condition | Min. | Typ. | Max. | Unit |
Output power | Pout | CW,24mA | 0.2 | 1.0 | 2.0 | mW |
CW,70mA | - | 10.0 | 12.0 | mW | ||
Center wavelength | λc | CW | 640 | 650 | 660 | nm |
630 | 635 | 640 | nm | |||
Spectral width | Δλ | CW,Ith+15mA | - | - | 5 | nm |
Threshold current | Ith | 650nm,25°C | 15 | 20 | 45 | mA |
Operating voltage | Vop | CW, Ith+15mA | - | 2.15 | 2.5 | V |
Monitor current | Im | CW, Ith+15mA | 0.05 | - | 0.5 | mA |
