2.5G InGaAs PIN diode module fiber

Parameter

Symbol

Condition

Ratings

Unit

Storage temperature

T_stg

-

-40~+100

°C

Operating temperature

T_op

-

-40~+85

°C

Reverse voltage

V_R

CW

30

V

Soldering time

-

-

10

s

Soldering Temp

-

-

260

°C

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test condition

Detection range

λ

1100

-

1650

nm

-

Dark current

I_d

0.1

1

5

nA

V_R=5V,25°C

Quantum efficiency

R

-

0.85

-

A/W

V_R=5V,λ=1310 nm

Saturation power

P

10

-

-

dBm

V_R=5V,25°C

Rise and Fall time

T_r/T_f

-

0.1

-

ns

R_L=50Ω

Bandwidth(3dB)

Bw

-

1

4

GHz

R_L=50Ω

Reverse Voltage

V_R

-

-

15

V

-

Capacitance

C_t

-

-

0.75

pF

V_R=5V

Return Loss

RL

-

-

-45

dB

-

CSO

CSO

62

-

-

dB

45~860MHz,2channel

CTB

CTB

68

-

-

dB

45~860MHz,2channel

C/N

CNR

52

-

-

dB

45~860MHz,2channel