This SiC FET device is based on a unique "cascode" circuit configuration in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate drive characteristics allow a true "replacement" of Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in a D2PAK-7L package, the device features ultra-low gate charge and excellent reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

typical application

Electric vehicle charging

Photovoltaic inverter

Switch mode power supply

Power factor correction circuit

DC-DC converter circuit

Induction heating

Product Category

Products > Power Solutions > Silicon Carbide Field Effect Transistors

Products> Discrete Transistors> Silicon Carbide Field Effect Transistors