Qorvo first-level agent QPL7425 cable TV amplifier Qorvo chip
Qorvo first-level agent QPL7425 cable TV amplifier Qorvo chip
Qorvo first-level agent QPL7425 cable TV amplifier Qorvo chip
Qorvo first-level agent QPL7425 cable TV amplifier Qorvo chip
Qorvo first-level agent QPL7425 cable TV amplifier Qorvo chip

Qorvo first-level agent QPL7425 cable TV amplifier Qorvo chip

USD $1 - $500 /Bag

Min.Order:1 Bag

Supply Ability:
150000 Bag / Bags per Month
Port:
HK
Payment Terms:
T/T
Delivery Detail:
2 days

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Brand Name:
Qorvo
Place of Origin:
China
Model Number:
QPL7425

Shenzhen Xinnan Technology Co., Ltd

Business license
Main Products: IC ,integrated circuit

Product Details

Qorvo (Verizon United Semiconductor Co., Ltd.) was established in 2015 by the merger of RF Micro Devices, Inc. and TriQuint Semiconductor, Inc.. It is an American wholly-owned enterprise that designs, develops and produces "radio frequency" integrated circuit products. The company provides standard and customized product solutions and strategic manufacturing services for mobile products, infrastructure and more.


Qorvo serves the global market to advance 5G networks, cloud computing, the Internet of Things and other emerging application markets to enable the global interconnection of people, places and things. Qorvo is currently the world's major supplier of power frequency amplifiers, with nearly 8,000 employees worldwide.


Qorvo is headquartered in North Carolina, USA, and has two high-tech manufacturing centers in Beijing and Dezhou in China. Qorvo (Beijing) is located in the Beijing Economic and Technological Development Zone, with more than 2,000 employees; Qorvo (Dezhou) is located in Dezhou City, Shandong Province. Technology Development Zone, currently has more than 1,500 employees. The company's customers are Huawei, Apple, OPPO, Vivo, Xiaomi, Lenovo, Samsung, Qualcomm and many other well-known domestic and foreign communications industry pioneers.


UJ4C075023L8S is a 750V, 23 mohm G4 SiC FET. It is based on a unique "cascode" circuit configuration in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate drive characteristics allow the use of off-the-shelf gate drivers, thus requiring minimal redesign when replacing Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in a TOLL (MO-229) package, the device features ultra-low gate charge and excellent reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive

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