4G FDD LTE1800MHZ (bAND3) Integrated RF Microwave Power Amplifier Electronic Fence System
4G FDD LTE1800MHZ (bAND3) Integrated RF Microwave Power Amplifier Electronic Fence System
4G FDD LTE1800MHZ (bAND3) Integrated RF Microwave Power Amplifier Electronic Fence System

4G FDD LTE1800MHZ (bAND3) Integrated RF Microwave Power Amplifier Electronic Fence System

USD $535 - $565 /Piece

Min.Order:5 Pieces

Supply Ability:
0 Piece / Pieces per Month

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Brand Name:
JW
Place of Origin:
China
Model Number:
JWFLTE1800M-43N1

Shenzhen Jinwen Technology Co., Ltd

Business license
Main Products: Microwave RF amplifier assembly Active and passive devices

Product Details

Launch section

Operating frequency:1830-1880MHz

Carrier bandwidth:Support FDD-LTE, bandwidth type 5/10/15/20M, working bandwidth 50MHz

Output power:43±1dBm

gain:45±1dB

Gain adjustment range:≥20dB

Gain adjustment step:1dB

In-band fluctuations:≤1.5dB

Input/output VSWR:≤1.5

Second harmonics:≤-45dBc

EVM:Under APD operating conditions, the deterioration of the signal EVM by the amplifier<1%

Out-of-band spurs:≤-36dBm (Amplifier On, No Input, Output Noise Floor Test, RBW=1MHz)

Adjacent channel leakage power ratio:

1. When APD is not turned on, the basic characteristics of the input signal: EVM<8%@QPSK, PAR≤7.5dB


2. ACPR≤-46dBC of adjacent road; ACPR≤-50dBC for the sub-neighboring road


3. Open-loop linear ACPR≤-31dBC (if the APD closed-loop meets the requirements, open-loop linearity is not required)

Operating current:≤3.2A


Receiving section

Operating frequency:1735-1785MHz

gain:45±1dB

Gain adjustment range:≥20dB

Gain adjustment step:1dB

In-band fluctuations:≤1.5dB

Input/output VSWR:≤1.5

Noise figure:≤2.8dB

Operating current:≤500mA

Contact Supplier

Mr. gongxiawen Chat Now
Telephone
86-188-20255933
Mobile
86-18820255933

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