Mfr. #
IRFB4227
Manufacturer Infineon
Product Category MOSFET
Technology Si
Mounting Style Through Hole
Package Case TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 200 V
Id - Continuous Drain Current 65 A
Rds On - Drain-Source Resistance 24 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 330 W
Channel Mode Enhancement
Brand Infineon IR
Configuration Single
Fall Time 31 ns
Height 15.65 mm
Length 10 mm
Product Type MOSFET
Rise Time 20 ns
Subcategory MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 21 ns
Typical Turn-On Delay Time 33 ns
Width 4.4 mm
Unit Weight 0.068784 oz
Features
Advanced Process Technology
Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
Low QG for Fast Response
High Repetitive Peak Current Capability for
Reliable Operation
Short Fall & Rise Times for Fast Switching
175°C Operating Junction Temperature for
Improved Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
class-D Audio Amplifier 300w-500w(Half-bridge)
Factory Pack Quantity 50
PRICE 1.71-3.54
