Mfr. #:

IRFBC40APBF

Manufacturer: Vishay

Product Category: MOSFET

RoHS:  Details

Technology: Si

Mounting Style: Through Hole

Package / Case: TO-220AB-3

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 600 V

Id - Continuous Drain Current: 6.2 A

Rds On - Drain-Source Resistance: 1.2 Ohms

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage: 4 V

Qg - Gate Charge: 42 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 150 C

Pd - Power Dissipation: 96 W

Channel Mode: Enhancement

Series: IRFBC

Packaging: Tube

Brand: Vishay Semiconductors

Configuration: Single

Fall Time: 18 ns

Height: 15.49 mm

Length: 10.41 mm

Product Type: MOSFET

Rise Time: 23 ns

Factory Pack Quantity:  1000

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Typical Turn-Off Delay Time: 31 ns

Typical Turn-On Delay Time: 13 ns

Width: 4.7 mm

Part # Aliases: IRFBC40APBF-BE3

Unit Weight: 0.068784 oz