Mfr. #:
BSC070N10NS3 G
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TDSON-8
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 90 A
Rds On - Drain-Source Resistance: 6.3 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 55 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 114 W
Channel Mode: Enhancement
Tradename: OptiMOS
Series: OptiMOS 3
Packaging: Reel
Packaging: Cut Tape
Packaging: kxxReel
Brand: Infineon Technologies
Configuration: Single
Fall Time: 8 ns
Forward Transconductance - Min: 36 S
Height: 1.27 mm
Length: 5.9 mm
Product Type: MOSFET
Rise Time: 10 ns
factory pack quantiy: 5000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 29 ns
Typical Turn-On Delay Time: 15 ns
Width: 5.15 mm
Part # Aliases: SP000778082 BSC7N1NS3GXT BSC070N10NS3GATMA1
Unit Weight: 0.003527 oz
