Mfr. #:
SI2301CDS-T1-GE3
Manufacturer: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 3.1 A
Rds On - Drain-Source Resistance: 112 mOhms
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Qg - Gate Charge: 3.3 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 1.6 W
Channel Mode: Enhancement
Tradename: TrenchFET
Series: SI2
Packaging: Reel
Packaging: Cut Tape
Packaging: KXXReel
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 10 ns
Product Type: MOSFET
Rise Time: 35 ns
factory pack quantiy: 3000
Subcategory: MOSFETs
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 30 ns
Typical Turn-On Delay Time: 11 ns
Part # Aliases: SI2301CDS-T1-BE3 SI2301CDS-GE3
Unit Weight: 0.000282 oz
