Mfr. #:

SI2301CDS-T1-GE3

Manufacturer: Vishay

Product Category: MOSFET

RoHS: Details

Technology: Si

Mounting Style: SMD/SMT

Package / Case: SOT-23-3

Transistor Polarity: P-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 20 V

Id - Continuous Drain Current: 3.1 A

Rds On - Drain-Source Resistance: 112 mOhms

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Vgs th - Gate-Source Threshold Voltage: 1 V

Qg - Gate Charge: 3.3 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 150 C

Pd - Power Dissipation: 1.6 W

Channel Mode: Enhancement

Tradename: TrenchFET

Series: SI2

Packaging: Reel

Packaging: Cut Tape

Packaging: KXXReel

Brand: Vishay Semiconductors

Configuration: Single

Fall Time: 10 ns

Product Type: MOSFET

Rise Time: 35 ns

factory pack quantiy: 3000

Subcategory: MOSFETs

Transistor Type: 1 P-Channel

Typical Turn-Off Delay Time: 30 ns

Typical Turn-On Delay Time: 11 ns

Part # Aliases: SI2301CDS-T1-BE3 SI2301CDS-GE3

Unit Weight: 0.000282 oz