Vishay
IRFBC40APBF
MOSFETs
Trans MOSFET N-CH 600V 6.2A 3-Pin(3+Tab) TO-220AB
Single N-Channel 600 V 1.2 Ohms Flange Mount Power Mosfet - TO-220AB
Product Technical Specifications
EU RoHS Compliant with Exemption
ECCN (US) EAR99
Part Status Active
HTS 8541.10.00.80
Automotive No
PPAP No
Product Category Power MOSFET
Configuration Single
Channel Mode Enhancement
Channel Type N
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 600
Maximum Gate Source Voltage (V) ±30
Maximum Continuous Drain Current (A) 6.2
Maximum Drain Source Resistance (MOhm) 1200@10V
Typical Gate Charge @ Vgs (nC) 42(Max)@10V
Typical Gate Charge @ 10V (nC) 42(Max)
Typical Input Capacitance @ Vds (pF) 1036@25V
Maximum Power Dissipation (mW) 125000
Typical Fall Time (ns) 18
Typical Rise Time (ns) 23
Typical Turn-Off Delay Time (ns) 31
Typical Turn-On Delay Time (ns) 13
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Through Hole
Package Height 9.01(Max)
Package Width 4.65(Max)
Package Length 10.51(Max)
PCB changed 3
Tab Tab
Standard Package Name TO
Supplier Package TO-220AB
Pin Count 3
Lead Shape Through Hole
Looking for a component that can both amplify and switch between signals within your circuit? The IRFBC40APBF power MOSFET from Vishay provides the solution. Its maximum power dissipation is 125000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.