Vishay

IRFBC40APBF

MOSFETs

Trans MOSFET N-CH 600V 6.2A 3-Pin(3+Tab) TO-220AB

Single N-Channel 600 V 1.2 Ohms Flange Mount Power Mosfet - TO-220AB

Product Technical Specifications

EU RoHS            Compliant with Exemption 

ECCN (US)           EAR99

Part Status          Active

HTS               8541.10.00.80

Automotive          No

PPAP              No

Product Category      Power MOSFET

Configuration        Single

Channel Mode         Enhancement

Channel Type          N

Number of Elements per Chip              1

Maximum Drain Source Voltage (V)          600

Maximum Gate Source Voltage (V)          ±30

Maximum Continuous Drain Current (A)       6.2

Maximum Drain Source Resistance (MOhm)    1200@10V

Typical Gate Charge @ Vgs (nC)         42(Max)@10V

Typical Gate Charge @ 10V (nC)           42(Max)

Typical Input Capacitance @ Vds (pF)      1036@25V

Maximum Power Dissipation (mW)          125000

Typical Fall Time (ns)                 18

Typical Rise Time (ns)                 23

Typical Turn-Off Delay Time (ns)          31

Typical Turn-On Delay Time (ns)           13

Minimum Operating Temperature (°C)        -55

Maximum Operating Temperature (°C)        150

Mounting                          Through Hole

Package Height                      9.01(Max)

Package Width                      4.65(Max)

Package Length                     10.51(Max)

PCB changed                        3

Tab                             Tab

Standard Package Name                 TO              

Supplier Package                  TO-220AB

Pin Count                         3

Lead Shape                     Through Hole

Looking for a component that can both amplify and switch between signals within your circuit? The IRFBC40APBF power MOSFET from Vishay provides the solution. Its maximum power dissipation is 125000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.