5SHY4045L0004 3BHB021400R0002 ABB 5shy series IGCT module

5SHY4045L0004 3BHB021400R0002 ABB 5shy series IGCT module

Nowadays semiconductor manufactures are increasingly taking technical and commercial responsibility for both the power semiconductor and its gate unit. Control parameters such as turn-on and off pulse amplitudes, pulse width and rate of rise, gate circuit inductance, back-porch current and others are standardised bei the manufacturer, making the IGCT suitable for converter topologies such as Voltage and Current Source Inverters, Resonance Converters and Static Breakers.

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The control interface discussion between converter design engineers and the power semiconductor manufacturer can be reduced to the specification of power supply, control signal transfer and mechanical assembly leading to a reduction of development costs and time. As a result the power semiconductor technologyis made available to a broader group of users. Basic design rules and handling / application recommendations for IGCT gate units regarding power supply, insulation and optical control interface, control-, diagnostics- and protection parameters as well as environmental aspects are described in this Application Note.

This application note covers the gate units of several IGCT types. The gate units can be grouped into two generations. Within a generation, the gate units are very similar in circuitry and functionality. They only differ in mechanical size and the dimensioning of the gate drive circuit. The application note is valid for IGCTs with both generation A and generation B gate units unless otherwise noted. Table 1 shows the IGCT with its respective gate unit.