BN-SWIR-II InGaAs Unit detector 0.9-2.5
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Bainel Auto Parts (ningbo) Co., Ltd.
item | value |
Model Number | BN-SWIR-II |
Type | InGaAs shortwave infrared sensor |
Place of Origin | China |
Zhejiang | |
Brand Name | BAINEL |
Usage | Imaging |
Theory | Shortwave infrared |
Output | SWIR |
Description | InGaAs shortwave infrared sensor |
Characteristic Parameter | Typical Value | ||||
Photosensitive Surface Diameter | 0.3mm | ||||
Format | unit | ||||
Operating Temperature | -20 ~ +60℃ | ||||
Storage Temperature | -55 ~ +70℃ | ||||
Spectral Response | 1.0~2.6μm | ||||
Peak Wavelength | 2.2μm | ||||
Quantum Efficiency | ≥70% | ||||
Peak Response Rate | ≥1.2 A/W | ||||
Device Impedance | 2 x 10^4 Ω | ||||
Dark Current | 5 x 10^-7 A @-0.01V | ||||
Equivalent Noise Power | 4 x 10^-13 W/Hz^1/2 | ||||
Peak Detection Rate | 7 x 10^10 cm.Hz^1/2/W | ||||
Packaging Characteristics | TO-46 |