BN-SWIR-I InGaAs shortwave infrared Unit detector
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Bainel Auto Parts (ningbo) Co., Ltd.
item | value |
Model Number | BN-SWIR-I |
Type | InGaAs shortwave infrared sensor |
Place of Origin | China |
Zhejiang | |
Brand Name | BAINEL |
Usage | Imaging |
Theory | Shortwave infrared |
Output | SWIR |
Description | InGaAs shortwave infrared sensor |
Characteristic Parameter | Typical Value | Remark | ||||
Photosensitive Surface Diameter | 1mm | Customized | ||||
Format | unit | |||||
Operating Temperature | -20 ~ +60℃ | |||||
Storage Temperature | -55 ~ +70℃ | |||||
Spectral Response | 1.0~2.5μm | |||||
Peak Wavelength | 2.2μm | |||||
Quantum Efficiency | ≥70% | -20℃ | ||||
Peak Response Rate | ≥1.1 A/W | -20℃ | ||||
Device Impedance | 2.5 x 10^5 Ω | -20℃ | ||||
Dark Current | ≤4 x 10^-7 A | @-0.01V,-20℃ | ||||
Equivalent Noise Power | ≤4.5 x 10^-12 W/Hz^1/2 | @2.2μm,-20℃ | ||||
Peak Detection Rate | ≥2 x 10^11 cm.Hz^1/2/W | -20℃ | ||||
Packaging Characteristics | Internal integrated thermoelectric cooler, TO-9 shell | Customized |