Specifications

1N4448 diode
1.100V 150mA DO-34/DO-35
2.high speed switching
3.low forward voltage
4.high efficieny low leakage

1N4448 diode

 

FEATURES:

 

• high speed switching
• lowpower loss
• low forward voltage
• high efficieny
• low leakage
• high current capbility
• high reliability
• silicon epitaxial planar diodes

 

MECHANICAL DATA:

• Case :glass sealed case
• lead:MIL-STD-202E,method 208 guaranteed
• polarity:color band denotes cathode end
• mounting position:any
• weight:013 gram