KBP207 kbp bridge diode
Negotiable /Piece
Min.Order:1000 Pieces
Shenzhen Bingxu Technology Co., Ltd.
SILICON BRIDGE RECTIFIERS DIODE KBP201 THRU KBP207
PRV : 50 - 1000 Volts
Io : 2.0 Amperes
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
MECHANICAL DATA :
* Case : Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 2.74 grams
Type Number | SYM BOL | KBP 201 | KBP 202 | KBP 203 | KBP 204 | KBP 205 | KBP 206 | KBP 207 | units |
Maximum Recurrent Peak Reverse Voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
Maximum RMS Voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
Maximum DC blocking Voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
Maximum Average Forward rectified Output Current at TA=50°C | IF(AV) | 2.0 | A | ||||||
Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) | IFSM | 60 | A | ||||||
Maximum Forward Voltage Drop per element at 2.0A DC | VF | 1.0 | V | ||||||
Maximum DC Reverse Current Ta =25°C at rated DC blocking voltage Ta =100°C | IR | 10.0 500.0 | uA uA | ||||||
I2t Rating for Fusing (t 8.3ms) | I2t | 10 | A2Sec | ||||||
Typical Junction Capacitance (Note 1) | CJ | 15 | pF | ||||||
Typical Thermal Resistance (Note 2) | R(JA) | 25 | °C /W | ||||||
Storage Temperature | TSTG | -55 to +150 | °C | ||||||
Operating Junction Temperature | TJ | -55 to +125 | °C |