Product Details

Product Description

Absolute Maximum Ratings(Tc=25℃):

Characteristics	Symbol	Rating	Unit
Maximum Repetitive Reverse Voltage	VRRM	200	V
Average Rectified Forward Current	IF(AV)	10	A
Non-repetitive Peak Forward Surge Current 8.3ms Single Half-Sine-Wave	IFSM	110	A
Collector power dissipation . Ta=25℃	Ptot	1.5	W
Junction temperature	Tj	175	℃
Storage temperature range	TSTG	-55~175	℃

Electrical Characteristics(Tc=25℃）:

Characteristics	Symbol	Test Condition	Min	Typ	Max	Unit
Forward Voltage	VF	IF=20A; TC=25℃			0.87	V
Reverse Current	IR	VR=100V;TC=25℃ VR=100V;TC=125℃			0.01 5	mA
Peak Repetitive Reverse Surge Current	IRRM	2.0 us Pulse Width ,f=1.0KHZ TJ<175℃			2	A

Symbol	Parameter	Typ	Units
RθJA	Junction-to-Ambient	70	℃/W

Features:

 Low power loss,high efficiency

 High surge capacity

 For use in low voltage,high frequency inverters, free wheeling,and polarity protection applications

 Metal silicon junction,majority carrier conduction

 Guard ring for over voltage protection

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Our Company

Thunder Microeletronics was establised in 1995, specialized in power semiconductor parts production for over 20 years. Factory Area is over 7000m², incluse 1000m² purification workshop (10T grade) . Our main products are Schottky Diodes, Fast and Ultra Fast Recovery Diode, Mosfet (Field-Effort diode), Transistors, Rectfider Bridges and Power Management IC. We have own product deveopment and applicatioon team, fully support your requirements.

Thunder Values :

* Future and Result Focus

*Reliability, Credibility, Legality

*Initiative and Sustainability
*Determination and Responsibility
*Trust, Openness and Fairness

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