4" 4inch 4H N type P type SiC EPI wafers
Negotiable /Piece
Min.Order:1 Piece
4" 4inch 6" 6inch 4H
N type P type SiC EPI wafers
Parameters | Specification | Unit | |
Diameter | 4" ~ 6" | ||
Poly-type | 4H | ||
Conductivity | N-type | P-type | |
Dopant | Nitrogen | Aluminum | |
Surface | (0001) Siliocn-face | ||
Off-orientation | 4 deg off towrd <11-20> | ||
Carrier Concentration | 5E15~1E18 | 5E15~1E19 | cm-3 |
Thickness | 0.5~20 | 0.5~5 | µm |
Surface Defect | ≤2.0 | cm-2 | |
Roughness (10µmX10µm) | ≤2.0 | nm | |
Scratches | <1 x wafer diameter | ea/mm | |
Usable Area | ≥90 | % |