4" 4inch 4H N type P type SiC EPI wafers

4" 4inch 4H N type P type SiC EPI wafers

Negotiable /Piece

Min.Order:1 Piece

Supply Ability:
1200 Piece / Pieces per Month
Port:
Taipei

Quick Details View All >

Place of Origin:
Taiwan
Brand Name:
Atecom
Model Number:
Customized

ATECOM TECHNOLOGY CO., LTD.

Business Type: Manufacturer,Trading Company,Agent
Main Products: Silicon wafer ,SiC wafer ,Sapphire wafer ,Solar wafers ,GaAs wafer

Product Details

4" 4inch 6" 6inch 4H

N type P type SiC EPI wafers 

4" 4inch 4H N type P type SiC EPI wafers

 

Parameters

Specification

Unit

Diameter

4" ~ 6"

 

Poly-type

4H

 

Conductivity

N-type

P-type

 

Dopant

Nitrogen

Aluminum

 

Surface

(0001) Siliocn-face

 

Off-orientation

4 deg off towrd <11-20>

 

Carrier Concentration

5E15~1E18

5E15~1E19

cm-3

Thickness

0.5~20

0.5~5

µm

Surface Defect

2.0

cm-2

Roughness (10µmX10µm)

2.0

nm

Scratches

<1 x wafer diameter

ea/mm

Usable Area

90

%

 

Contact Supplier

Mr. Eric Chang Product Manager Chat Now
Telephone
886-2-27942800
Mobile
886920147897
Fax
886-2-27949800
Address
4/F-3, No. 58

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