Item

Parameter

Spec

Unit

1

Product Name

Single Crystal Gallium Arsenide,GaAs Wafer

2

Diameter

2”

4”

mm

3

Thickness

350± 20

350± 25

μm

4

Dopant

N/Si

5

Surface Orientation

2 º , 6 º and 15º± 0. 5º off toward (011/111)

degree

6

Primary Flat      Orientation        

                    Length

(0-1-1)± 0. 5º

16 ± 1.0

(0-1-1)± 1.0º

32.5 ± 1.0

degree

mm

7

Secondary Flat   Orientation   

Length

(0-11)± 0. 5º

8 ± 1.0

(0-11)± 0. 5º

18 ± 1.0

degree

mm

8

Hall Mobility

>1500

>1500

cm²/V.S

9

Etch Pit Density

< 2000

< 5000

cm^-2

10

Carrier Concentration

(0.4-2.5) x 10¹⁸

(0.4-2.5) x 10¹⁸

cm^-3

11

TTV

<10

<15

μm

12

Bow

<10

 <15

μm

13

Warp

<10

<15

μm

14

Roughness Front Side

Polished

Å

15

Roughness Back Side

Polished or Etched

μm