Specifications

IGBT single-switch module
VCES = 600V,1200V IC = 200A~800A VISO = 2500V (RMS)

Feature
GBT is a MOSFET and bipolar transistor made of a composite
device, the input is extremely MOSFET, the output is extremely PNP
transistor, which integration of these two devices are the advantage of.
with a small power MOSFET device driver and switching speed
advantage.
with a bipolar device saturation pressure lowering of the advantage
of large capacity, it frequency response range and power MOSFET
transistor, and is available to work on dozen of kHz frequency range