silicon ingot
Negotiable
Min.Order:1
Jianghai Non-Woven Fabric Co., Ltd.
Sepcification:
6N minimum, Mono, Solar grade
Cristal growth method: CZ
Dopant: P/Boron
Dislocation density: less than 100 cm2
Orientation: 100 +- 3 face and diagonal
Oxygen concentration: less than 1.0x1018 atm os/cm 3
Carbon concentration: less than 3.0x1016 atm os/cm 3
Resistivity: 0.5-3
Lifetime: 10us
Size: 153 +-3mm
Length: 200mm - 400mm